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2SK3757 - N-Channel MOSFET

2SK3757 Description

www.DataSheet4U.com 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Regulator Applications * .

2SK3757 Applications

* Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ. ) High forward transfer admittance: |Yfs| = 1.0 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings

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N-Channel MOSFET Toshiba Semiconductor
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