CBS05F30 Schottky Barrier Diode

Toshiba Semiconductor

CBS05F30 Description

Schottky Barrier Diode Silicon Epitaxial CBS05F30 1.Applications * High-Speed Switching 2..

CBS05F30 Features

* (1) Low forward voltage: VF(3) = 0.38 V (typ. ) (2) Thin and compact packaging: Height = 0.40mm(max) 3. Packaging and Internal Circuit CBS05F30 1: Cathode 2: Anode CST2B 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse

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Datasheet Details

Part number: CBS05F30
Manufacturer: Toshiba ↗ Semiconductor
File Size: 123.60 KB
Datasheet: CBS05F30_ToshibaSemiconductor.pdf
Description: Schottky Barrier Diode

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Schottky Barrier Diode Toshiba Semiconductor

Toshiba Semiconductor CBS05F30-like datasheet