TIM3742-8UL MICROWAVE POWER GaAs FET

Toshiba Semiconductor

TIM3742-8UL Description

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA .

TIM3742-8UL Features

* TIM3742-8UL
* HIGH POWER P1dB=39.5dBm at 3.7GHz to 4.2GHz
* HIGH GAIN G1dB=11.0dB at 3.7GHz to 4.2GHz
* BROAD BAND INTERNALLY MATCHED
* HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Pow

TIM3742-8UL Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is

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Datasheet Details

Part number: TIM3742-8UL
Manufacturer: Toshiba ↗ Semiconductor
File Size: 98.99 KB
Datasheet: TIM3742-8UL_ToshibaSemiconductor.pdf
Description: MICROWAVE POWER GaAs FET

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MICROWAVE POWER GaAs FET Toshiba Semiconductor

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