TP65H035WSQA - 650V GaN FET

Description

The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device.

offering superior reliability and performance.

Features

JEDEC-qualified GaN technology.
Junction temperature rating of 175C.
Dynamic RDS(on) production tested.
Robu.

📥 Download Datasheet

TP65H035WSQA 650V GaN FET by Transphorm - Datasheet Preview — Datasheet preview – TP65H035WSQA

Datasheet Details

Part number	TP65H035WSQA
Manufacturer	Transphorm
File Size	945.99 KB
Description	650V GaN FET
Datasheet	TP65H035WSQA Datasheet
Additional preview pages of the TP65H035WSQA datasheet.

📁 Similar Datasheet

TP65H035G4QS - 650V SuperGaN FET (Renesas)
TP65H035G4WS - 650V FET (Renesas)
TP65H035G4YS - 650V SuperGaN FET (Renesas)
TP65H030G4PQS - 650V GaN FET (Renesas)
TP65H030G4PRS - 650V GaN FET (Renesas)
TP65H030G4PWS - 650V GaN FET (Renesas)
TP65H050G4BS - 650V SuperGaN FET (Renesas)
TP65H050G4QS - 650V FET (Renesas)
TP65H050G4WS - 650V FET (Renesas)
TP65H050G4YS - 650V FET (Renesas)

Other Datasheets by Transphorm

TP65H035WS - 650V Cascode GaN FET
TP65H035G4QS - 650V FET
TP65H035G4WS - SuperGaN FET
TP65H050BS - GaN FET
TP65H050WS - 650V GaN FET
TP65H070L - 650V GaN FET
TP65H070LDG - 650V GaN FET
TP65H070LSG - 650V GaN FET

Full PDF Text Transcription

Click to expand full text

TP65H035WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Published: Apr 29, 2019 |