TP65H035WSQA datasheet, fet equivalent, Transphorm

TP65H035WSQA Features and benefits

* JEDEC-qualified GaN technology
* Junction temperature rating of 175C
* Dynamic RDS(on) production tested
* Robu.

TP65H035WSQA Description

The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performan.

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TP65H035WSQA Datasheet, fet equivalent, Transphorm

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TP65H035WSQA Features and benefits

TP65H035WSQA Description