TP65H035WSQA Key Features
- JEDEC-qualified GaN technology
- Junction temperature rating of 175C
- Dynamic RDS(on) production tested
- Part: TP65H035WSQA
- Description: 650V GaN FET
- Manufacturer: Transphorm
- Size: 945.99 KB
Other TP65H035WSQA Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
TP65H035G4QS | 650V SuperGaN FET |
|
Renesas |
TP65H035G4WS | 650V FET |
|
Renesas |
TP65H035G4YS | 650V SuperGaN FET |