TSD60R380S1 Datasheet (Truesemi)

TSD60R380S1, N-Channel MOSFET

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance,

TSD60R380S1 Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.34Ω

* Ultra Low gate charge (typ. Qg = 38nC)

* 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃)