TSD60R460S1

N-Channel MOSFET

Truesemi

TSD60R460S1 Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.42Ω

* Ultra Low gate charge (typ. Qg = 35nC)

* 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 10

TSD60R460S1 General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, .

TSD60R460S1 Datasheet (743.53 KB)

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TSD60R460S1

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Truesemi

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743.53 KB

Description:

N-channel mosfet.

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TSD60R460S1 N-Channel MOSFET Truesemi

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TSD60R460S1 Features

TSD60R460S1 General Description

Datasheet Details

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