TSF5N65M - N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSF5N65M Features
* 4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V
* Low gate charge ( typical 16nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GDS TO-220 GD S TO-220F
* ◀▲ G
* S Absolute Maximum Ratings TC =
