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TSP8N60M

600V N-Channel MOSFET

TSP8N60M Features

* 7.5A,600v,RDS(on)=1.2Ω@VGS=10V

* Gate charge (Typical 30nC)

* High ruggedness

* Fast switching

* 100% AvalancheTested

* Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technol

TSP8N60M General Description

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, act.

TSP8N60M Datasheet (801.77 KB)

Preview of TSP8N60M PDF

Datasheet Details

Part number:

TSP8N60M

Manufacturer:

Truesemi

File Size:

801.77 KB

Description:

600v n-channel mosfet.

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TSP8N60M 600V N-Channel MOSFET Truesemi

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