TSP8N65M Datasheet - Truesemi

TSP8N65M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP8N65M Features

* 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V

* Low gate charge ( typical 29nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GDS TO-220 GD S TO-220F

* ◀▲ G

* S Absolute Maximum Ratings TC

TSP8N65M Datasheet (217.44 KB)

TSP8N65M Datasheet Preview — Preview of TSP8N65M PDF

Datasheet Details

Part number:

TSP8N65M

Manufacturer:

Truesemi

File Size:

217.44 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSP8N60M 600V N-Channel MOSFET (Truesemi)

TSP80R1K3S1 N-Channel MOSFET (Truesemi)

TSP80R240S1 N-Channel MOSFET (Truesemi)

TSP80R380S1 N-Channel MOSFET (Truesemi)

TSP80R500S1 N-Channel MOSFET (Truesemi)

TSP80R600S1 N-Channel MOSFET (Truesemi)

TSP830M N-Channel MOSFET (Truesemi)

TSP840M N-Channel MOSFET (Truesemi)

TSP8A100S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP058A BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)

TAGS

TSP8N65M N-Channel MOSFET Truesemi

Image Gallery

TSP8N65M Distributor