Datasheet4U Logo Datasheet4U.com

TSP8N65M

N-Channel MOSFET

TSP8N65M Features

* 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V

* Low gate charge ( typical 29nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GDS TO-220 GD S TO-220F

* ◀▲ G

* S Absolute Maximum Ratings TC

TSP8N65M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP8N65M Datasheet (217.44 KB)

Preview of TSP8N65M PDF

Datasheet Details

Part number:

TSP8N65M

Manufacturer:

Truesemi

File Size:

217.44 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSP8N60M 600V N-Channel MOSFET (Truesemi)

TSP80R1K3S1 N-Channel MOSFET (Truesemi)

TSP80R240S1 N-Channel MOSFET (Truesemi)

TSP80R380S1 N-Channel MOSFET (Truesemi)

TSP80R500S1 N-Channel MOSFET (Truesemi)

TSP80R600S1 N-Channel MOSFET (Truesemi)

TSP830M N-Channel MOSFET (Truesemi)

TSP840M N-Channel MOSFET (Truesemi)

TSP8A100S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP058A BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR (Pan Jit International Inc.)

TAGS

TSP8N65M N-Channel MOSFET Truesemi

Image Gallery

TSP8N65M Datasheet Preview Page 2 TSP8N65M Datasheet Preview Page 3

TSP8N65M Distributor