TTS3816B4E

2M x 16Bit x 4 Banks synchronous DRAM

TTS3816B4E Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four-banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

TTS3816B4E General Description

The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cyc.

TTS3816B4E Datasheet (302.99 KB)

TTS3816B4E Datasheet Preview — Preview of TTS3816B4E PDF

Datasheet Details

Part number:

TTS3816B4E

Manufacturer:

TwinMOS

File Size:

302.99 KB

Description:

2m x 16bit x 4 banks synchronous dram.

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TTS3816B4E 16Bit Banks synchronous DRAM TwinMOS

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TTS3816B4E Features

TTS3816B4E General Description

Datasheet Details

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Description:

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