DU2880 - RF MOSFET Power Transistor

Tyco Electronics

Datasheet Details

N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices DU2880T Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltage at 25°C 1 Symbol BVDSS 1 Min 65 1 Max ( Units 1 4.0 4.0 V mA pA V S pF pF PF dB % V,,=O. O V, 1,,=20.0 mA V,,=28.0 v,,=20.0 V&O.0 v,,=lo. o V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0.

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Published: Apr 3, 2005 |