DU2880V - RF MOSFET Power Transistor

Tyco Electronics

Datasheet Details

. N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices DU2880V Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation ( JunctionTemperature I StorageTemperature Thermal Resistance 1 ( I VOS VGS ‘OS P, T, T,,, 0JC I I 65 20 8’ 206 ZOO I I ” ” A w I I ( “C “‘2 I ( ( -55 to +150 0.6.

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Published: Apr 3, 2005 |