Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent T
✔ MAPLST0822-002PP Application
up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatn
MAPLST1617-030CF, Tyco Electronics
..
RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V
5/5/05
Preliminary
MAPLST1617-030CF
Features
Designed for I.
MAPLST1820-030CF, Tyco Electronics
..
RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V
5/14/04
Preliminary
MAPLST1820-030CF
Features
Designed for .
MAPLST1820-060CF, Tyco Electronics
..
RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V
5/24/04
Preliminary
MAPLST1820-060CF
Features
Designed for .
MAPLST1820-090CF, Tyco Electronics
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RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V
5/14/04
Preliminary
MAPLST1820-090CF
Features
Designed for .