MAPLST0810-045CF RF Power Field Effect Transistor

Tyco Electronics

Description

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 865 * 960 MHz, 45W, 26V 5/21/04 Preliminary MAPLST0810-045CF .

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Datasheet Specifications

Part number: MAPLST0810-045CF
Manufacturer: Tyco Electronics
File Size: 162.75 KB
Datasheet: MAPLST0810-045CF_TycoElectronics.pdf
Description: RF Power Field Effect Transistor

Applications

* Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 45W (P1dB) Q Gain: 17.5dB Q Efficiency: 50% Ruggedness: 10:1 VSWR @ 45W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability P-239 Maximum Ratings Parameter Drain
* Source Voltage Gate
* Source Vo

MAPLST0810-045CF Distributors

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MAPLST0810-045CF Power Field Effect Transistor Tyco Electronics

Tyco Electronics MAPLST0810-045CF-like datasheet