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MAPLST2122-015CF RF Power Field Effect Transistor

MAPLST2122-015CF Description

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 * 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF .

MAPLST2122-015CF Applications

* in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Package Style 15W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ. ) Q Ga

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Datasheet Details

Part number
MAPLST2122-015CF
Manufacturer
Tyco Electronics
File Size
261.53 KB
Datasheet
MAPLST2122-015CF_TycoElectronics.pdf
Description
RF Power Field Effect Transistor

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Power Field Effect Transistor Tyco Electronics
Tyco Electronics MAPLST2122-015CF-like datasheet