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PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty

PH1214-110M Description

Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1..
M/A-COM’s PH1214-110M is a silicon bipolar NPN power transistor intended for use in L-band 1.

PH1214-110M Features

* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedanc

PH1214-110M Applications

* the PH1214-110M can produce 110 watts of output power with medium pulse length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold meta

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Datasheet Details

Part number
PH1214-110M
Manufacturer
Tyco Electronics
File Size
52.25 KB
Datasheet
PH1214-110M_TycoElectronics.pdf
Description
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty

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Radar Pulsed Power Transistor 110 Watts 1.20-1.40 GHz 150ms Pulse 10 % Duty Tyco Electronics
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