PH1214-110M Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty

Tyco Electronics

Description

Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-110M PH1214-110M Radar Pulsed Power Transistor - 110 Watts, 1..
M/A-COM’s PH1214-110M is a silicon bipolar NPN power transistor intended for use in L-band 1.

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Datasheet Specifications

Part number: PH1214-110M
Manufacturer: Tyco Electronics
File Size: 52.25 KB
Datasheet: PH1214-110M_TycoElectronics.pdf
Description: Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty

Features

* NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedanc

Applications

* the PH1214-110M can produce 110 watts of output power with medium pulse length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold meta

PH1214-110M Distributors

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PH1214-110M Radar Pulsed Power Transistor 110 Watts 1.20-1.40 GHz 150ms Pulse 10 % Duty Tyco Electronics

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