NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
f
_ .137.
919 ~ (3.~8S.25) I 1
.004=.001 (.10+.03)
UNLESS
O-HERW:SE
NOTED.
PH1214-4M_TycoElectronics.pdf
