NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetii: Metal/Ceramic Package
c_I-
. ?90=.01c (2.29Z.25)
. Absolute Maximum Ratings at 25°C
Parameter Symbol Rating
65
Units
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature
VCES
V
.1371.313.
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