Pulsed Datasheet | Specifications & PDF Download

www.DataSheet4U.com R.A.P.990305-BEHRE ITC1000 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The ITC1000 is a common base bipolar tr

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DATA SHEET LASER DIODE NDL7503P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7503P Series is

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FAN48632 — 2.5 MHz, 2.0 A Pulsed-Load Synchronous TinyBoost™ Regulator with Bypass Mode for GSM PA Supply April 2014 FAN48632 2.5 MHz, 2.0 A Pulsed-

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PH2856-160 Radar Pulsed Power Transistor 160W, 2.856 GHz, 12µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base config

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0405-1000M Rev C . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally ma

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0912-45 45 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-45 is a COMMON BASE bipolar transistor. It is designed for pu

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0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulse

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MAPRST0002 Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features • • • • • • • • • NPN silicon microwave power transistors Co

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* =s==-z-s .-- z = -----= = x5 r = an AMP company v2.00 Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-8M Features N

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* an AMP company ==5= ,,-= E ---== EF .-----z ,= Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN S

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS

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PH2226-50M Radar Pulsed Power Transistor 50 W, 2.2 - 2.6 GHz, 100 µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base

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an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features NPN Silicon Microwave Power Transisto

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an AMP cotn~any Linear Accelerator Pulsed Power Transistor, 16OW, 12~s Pulse, 10% Duty 2.856 GHz Features l l l l l l l l PH2856-160 NPN Silicon Mi

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* .---= - = -M= ZF an AMP company z-s?=‘= 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN

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DATA SHEET LASER DIODE NDL7503P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7503P Series is

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DATA SHEET LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is

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IL91210EN TONE/PULSEDIALER The IL91210EN is a single-chip, silicon gate, CMOS integrated circuit with an on-chip oscillator for a 3.58 MHz crystal or

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0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pu

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