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Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package
Absolute Maximum Ratings at 25°C
UNLESS
C-iTRW:SE
‘ICTED.
T3LE?ANCES
A?E
(xI,
--
IN’HES =.O”‘j’ I IMETERS ; 13yy’
I
Electrical Characteristics
Parameter
at 25°C
Symbol Min Max Units Test Conditions
Collector-Emitter Breakdown Voltage Collector-Emitterleakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility Current
BV,,, ICES RW(X) PO”T GP
‘lC
65
1.
PH1214-6M Datasheet
