Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-300M Product details
Features
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Outline Drawing
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute Maximum Ratings @ 25 °C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 °C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.
📁 Related Datasheet
PH1214-6M - RADAR PULSED POWER TRANSISTOR (MA-com)