PH1214-300M - Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty

Datasheet Summary

Features

Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 °C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.

Tyco Electronics

📥 Download Datasheet

Datasheet Details

Part number	PH1214-300M
Manufacturer	Tyco Electronics
File Size	248.44 KB
Description	Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
Datasheet	PH1214-300M Datasheet
Additional preview pages of the PH1214-300M datasheet.

📁 Similar Datasheet

PH1214-6M - RADAR PULSED POWER TRANSISTOR (MA-com)
PH1225AL - N-channel MOSFET (NXP)
PH128160T-066-L01Q - LCD Module (POWERTIP)
PH128160T-066-L03Q - Display Module (POWERTIP)
PH128800T002-ZBC01 - LCD (POWERTIP)
PH128800T004-ZFA - LCD (POWERTIP)
PH128800T004-ZHA - Display Module (POWERTIP)
PH128800T004-ZZA - Display Module (POWERTIP)
PH100A280-12 - DC-DC Converters (TDK-Lambda)
PH100A280-24 - DC-DC Converters (TDK-Lambda)

Other Datasheets by Tyco Electronics

PH1214-110M - Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-12M - Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty
PH1214-220M - Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-25M - Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty
PH1214-2M - Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz
PH1214-40M - Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
PH1214-4M - Radar Pulsed Power Transistor/ 4W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz
PH1214-55EL - Radar Pulsed Power Transistor/ SW/ 1 .Oms Pulse/ 10% Duty 1.2 - 1.4 GHz

Full PDF Text Transcription

Click to expand full text

Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 Rev. 0 PH1214-300M Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 °C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 90 3.0 21.

Published: Mar 22, 2005 |