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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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Infrared Emitter Product No: M T E 1 3 0 0 N N 1 - W R C Peak Emission Wavelength: 1300nm The 1300nm IR emitter series is designed for applications r

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               ENABLE 1nF 6 STAT BATP 2 BIAS 5 10nF 8 ENETA3000SW 3 22uF 2.2uH RISET 7 ISET BATC 1 BATN 4 10uF 10uF Li+ Batt

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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TST002 SEMI CONDUCTOR MJE13002 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ W

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SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D FEATURES TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switching applications TO-92 LIMMI

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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MIX3007 2X3W D MIX3007、2 X 3W D 。 MIX3007RNS()PSRR MIX3007。 PWM、PCB ,。90%, MIX3007 。  D : — 3 W/ch (VDD=5V RL=3Ω THD+N=10%) — 1.6 W/ch (VDD=5V R

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 13009 PNP * ： 、 、、 。 * ： 、、。 B C E ：( Tc=25 ℃

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operat

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100

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13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximu

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ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot s

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( DataSheet : www.DataSheet4U.com ) NPN ■■ ：、。 D13009 C B E ■■ （Ta=25℃） - - - ■■（Ta=25℃） - - - - - - - ■■ HFE(1) （Tc=25

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operat

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