RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
LF2805A Product details
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications.
Broadband Linear Operation 500 MHz to 1400 MHz
LF2805A
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Dra.
📁 Related Datasheet
LF2000A-NH - 5 up to 100A/High attenuation (Soshin)