QM3809M6 Datasheet (UBIQ) - Dual N-Ch Fast Switching MOSFETs

QM3809M6, Dual N-Ch Fast Switching MOSFETs

The QM3809M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QM3809M6 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi

QM3809M6 Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Dual N-Ch Fast Switching MOSFETs Product Summery CH Die1 Die2 BVDSS 30V 30V RDSON 9mΩ 5.5mΩ ID 57A 72A Applications z High Frequency Point-of-