QN3107M6N - N-Channel 30V Fast Switching MOSFET

UBIQ

QN3107M6N Datasheet Preview — Preview of QN3107M6N PDF

Datasheet Details

Part number	QN3107M6N
Manufacturer	UBIQ
File Size	330.22 KB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3107M6N-UBIQ.pdf

QN3107M6N Product details

Description

The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 2.6mΩ ID (TC=25℃) 110A.

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Published: Dec 14, 2018 |