P0165AI Datasheet - UNIKC

P0165AI MOSFET

P0165AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 14Ω @VGS = 10V ID 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 1 0.6 3 1.1 5.8 Power DissipationA TC = 25 °C TC = 100 °C PD 27.6 11 Opera.

P0165AI Datasheet (358.08 KB)