P0165EI Datasheet - UNIKC

P0165EI MOSFET

P0165EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 10.6Ω @VGS = 10V ID 1A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 1 0.7 1.8 0.5 1.25 Power Dissipation TC = 25 °C TC = 100 °C PD 37 15 Operating Jun.

P0165EI Datasheet (761.98 KB)