P0165ED Datasheet - UNIKC

P0165ED MOSFET

P0165ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 10.6Ω @VGS = 10V ID 1A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 1 0.7 3 0.5 Avalanche Energy3 EAS 1.25 Power Dissipation TC = 25 °C TC = 100 °C PD 37 15 Operating Jun.

P0165ED Datasheet (761.23 KB)