P0260ETF Datasheet - UNIKC

P0260ETF N-Channel MOSFET

P0260ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 4.3Ω @VGS = 10V 2A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 2 1.3 IDM 8 IAS 2 EAS 20 Power Dissipation TC = 25 °C PD 29 TC = 100 °C 11 Operati.

P0260ETF Datasheet (748.26 KB)