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P0460CTF-P Datasheet - UNIKC

P0460CTF-P N-Channel MOSFET

P0460CTF-P N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 2.7Ω @VGS = 10V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 4 2.4 IDM 15 IAS 2 EAS 20 Power Dissipation TC = 25 °C PD 24 TC.

P0460CTF-P Datasheet (378.44 KB)