P0460ED Datasheet - UNIKC

P0460ED N-Channel Transistor

P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.3Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1，2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.5 20 4 Avalanche Energy3 EAS 80 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Operating Junct.

P0460ED Datasheet (777.11 KB)