P0460EDA Datasheet - UNIKC

P0460EDA N-Channel MOSFET

P0460EDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.5Ω @VGS = 10V ID 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 4 2.5 20 2 Avalanche Energy3 EAS 20 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Juncti.

P0460EDA Datasheet (802.17 KB)