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P0460EIS Datasheet - UNIKC

P0460EIS-UNIKC.pdf

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Datasheet Details

Part number:

P0460EIS

Manufacturer:

UNIKC

File Size:

421.59 KB

Description:

Mosfet.

P0460EIS, MOSFET

P0460EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.3Ω @VGS = 10V ID 4A TO-251(IS) 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 4 2.5 20 4 80 Power Dissipation TC = 25 °C TC = 100 °C

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