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P057AAT Datasheet - UNIKC

P057AAT N-Channel MOSFET

P057AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 75V 5.8mΩ @VGS = 10V ID 129A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 129 82 410 Avalanche Current IAS 60 Avalanche Energy L = 0.3mH EAS 557 Power Dissipation TC = 25 °C TC = 100 °C PD 192 77 Operating Junction & Storage Tem.

P057AAT Datasheet (294.93 KB)