P06P03LDG Datasheet - UNIKC

P06P03LDG MOSFET

P06P03LDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -12 -10 -30 Avalanche Current IAS -29 Avalanche Energy L = 0.1mH EAS 42 Power Dissipation TC = 25 °C TC = 100 °C PD 48 20.

P06P03LDG Datasheet (469.13 KB)