P0603BDB MOSFET
P0603BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 72A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 72 46 160 Avalanche Current IAS 50 Avalanche Energy L=0.1mH EAS 126 Power Dissipation TC= 25 °C TC= 100°C PD 55 22 Operating Junction & Storage Temperature .
