P0603BDL Datasheet - UNIKC

P0603BDL MOSFET

P0603BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 6.8mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 68 43 160 Avalanche Current IAS 52 Avalanche Energy L = 0.3mH EAS 135 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junc.

P0603BDL Datasheet (431.80 KB)