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P0603BVG N-Channel MOSFET

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Description

P0603BVG P0603BVG Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.008 at VGS= 10 V 0.011 at VGS.

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Datasheet Specifications

Part number
P0603BVG
Manufacturer
VBsemi
File Size
508.95 KB
Datasheet
P0603BVG-VBsemi.pdf
Description
N-Channel MOSFET

Features

* Halogen-free
* TrenchFET® Power MOSFET
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg Tested

Applications

* Notebook CPU Core - High-Side Switch D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ± 20 V TC = 25 °C 13 Continuous Drain Current (TJ = 150 °C)

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