Datasheet Details
- Part number
- P0603BVG
- Manufacturer
- VBsemi
- File Size
- 508.95 KB
- Datasheet
- P0603BVG-VBsemi.pdf
- Description
- N-Channel MOSFET
P0603BVG Description
P0603BVG P0603BVG Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.008 at VGS= 10 V 0.011 at VGS.
P0603BVG Features
* Halogen-free
* TrenchFET® Power MOSFET
* Optimized for High-Side Synchronous
Rectifier Operation
* 100 % Rg Tested
P0603BVG Applications
* Notebook CPU Core
- High-Side Switch
D
G
Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
VGS
± 20
V
TC = 25 °C
13
Continuous Drain Current (TJ = 150 °C)
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