P0603BDG MOSFET
P0603BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6.5mΩ @VGS = 10V ID 68A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 68 43 180 Avalanche Current IAS 52 Avalanche Energy L=0.1mH EAS 136 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Ju.
