P0603BDD MOSFET
P0603BDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ @VGS = 10V ID 71A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 71 45 180 Avalanche Current IAS 41 Avalanche Energy L=0.1mH EAS 84 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Operating Junction & Storage Temperature R.
