P085AATX Datasheet - UNIKC

P085AATX N-Channel MOSFET

P085AATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 55V 7.5mΩ @VGS = 10V ID 110A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 110 69 300 Avalanche Current IAS 106 Avalanche Energy L = 0.1mH EAS 561 Power Dissipation TC = 25 °C TC = 100 °C PD 166 66 Operating Junction & Storage T.

P085AATX Datasheet (436.57 KB)