P0803BDG - MOSFET
P0803BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.2mΩ @VGS = 10V 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID 60 38 IDM 120 Avalanche Current IAS 35 Avalanche Energy L=0.1mH EAS 60 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Juncti
