P0804BD8 - MOSFET
P0804BD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 62 39 160 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS 52 137 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction.
