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P0803BVG Datasheet - UNIKC

P0803BVG N-Channel MOSFET

P0803BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 8mΩ @VGS = 10V ID 13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 13 8 50 Avalanche Current IAS 50 Avalanche Energy L = 0.1mH EAS 125 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1 Operating Junction & Storage Temperature.

P0803BVG Datasheet (348.76 KB)