P0920BD Datasheet - UNIKC

P0920BD N-Channel Transistor

P0920BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 0.42Ω @VGS = 10V 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C ID 9 5 IDM 31 IAS 9 Avalanche Energy L =2.8mH EAS 113 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range .

P0920BD Datasheet (483.40 KB)