P0925AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 0.48Ω @VGS = 10V ID 9A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C ID IDM IAS 9 5.4 36 9 Avalanche Energy L =1.8mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD .