P1520ETF Datasheet - UNIKC

P1520ETF N-Channel MOSFET

P1520ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 198mΩ @VGS = 10V 15A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 15 9.3 IDM 45 Avalanche Current IAS 16.5 Avalanche Energy L = 1mH EAS 136 Power Dissipation TC = 25 °C PD 32 TC = 100 °.

P1520ETF Datasheet (779.66 KB)