P3010BV - N-Channel MOSFET
P3010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 30mΩ @VGS = 10V ID 5.8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 5.8 4.6 37 Avalanche Current IAS 12 Avalanche Energy L =1mH EAS 72 Power Dissipation TA= 25 °C TA =70 °C PD 2.3 1.5 Junction &
