P5015BD - N-Channel Transistor
P5015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 50mΩ @VGS = 10V ID 24A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 24 15 90 Avalanche Current IAS 19 Avalanche Energy L=0.1mH EAS 18 Power Dissipation TC = 25 °C TC = 100 °C PD 78 31 Junctio
