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P6010DTFG Datasheet - UNIKC

P6010DTFG P-Channel MOSFET

P6010DTFG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 60mΩ @VGS = -10V ID -24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM -24 -15 -96 Avalanche Current IAS -52 Avalanche Energy L = 0.1mH EAS 139 Power Dissipation TC = 25 °C TC = 100 °C PD .

P6010DTFG Datasheet (363.01 KB)